Gate Driver ICs have a variety of configurations (high side, low side, half. Full Bridge Drivers Three Phase Drivers Driver Boards Gate Driver Support ICs. Full bridge driver IC. 2005 Mar 24 2. Moment the gate drive voltage is equal to the voltage on pin VDD for the low side transistors and VDD −0.6 V for the.

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The MLX83100 is a two-phase pre-driver (also called bridge driver or gate driver) IC with integrated current sense amplifier. This device is used to drive brushed DC motors in combination with a microcontroller and four discrete power N-FETs. This device is able to control four external N-FETs for full H-bridge control in the supply range from 4.5 volt to 28 volt, by means of the integrated charge pump. The high side gate drivers are supplied via bootstrap circuits. The trickle charge pump allows 100% pulse width modulation (PWM) operation despite the use of bootstrap capacitors. The bootstrap voltage regulator is optimized for gate charges up to 500 nC per FET at 20 kHz PWM.

Our MLX83100 pre-driver comprises various monitoring and protection functions, including undervoltage and overvoltage detection at multiple internal voltage nodes, over temperature detection, and drain-source and gate-source voltage monitoring of the external N-FETs. In case of fault detection, the serial ICOM diagnostics interface will inform the microcontroller with a PWM signal, where the duty cycle indicates the nature of the error. An integrated fast, high-bandwidth, low offset current sense amplifier allows for precise torque control, with programmable gain selection. The MLX83100 provides an EEPROM for configurability, avoiding the need for a high pin-count package. The configuration allows the customer to optimize the pre-driver’s operation for different applications.

For brushless (BL)DC applications see also the of the same pre-driver family. For sensorless BLDC applications see also our embedded-MCU BLDC controllers MLX812xx family.

The PWD13F60 is a high-density power driver integrating gate drivers and four N-channel power MOSFETs in dual half bridge configuration. The integrated power MOSFETs have low R DS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be easily supplied by the integrated bootstrap diode. The high integration of the device allows to efficiently drive loads in a tiny space. The PWD13F60 device accepts a supply voltage (V CC) extending over a wide range and is protected by means of low-voltage UVLO detection on the supply voltage. The input pins extended range allows an easy interfacing with microcontrollers, DSP units or Hall effect sensors.

The device is available in a compact VFQFPN package. Key Features • Power system-in-package integrating gate drivers and high-voltage power MOSFETs • Low R DS(on) = 320 mΩ • BV DSS = 600 V • Suitable for operating as • Full bridge • Dual independent half bridges • Wide driver supply voltage down to 6.5 V • UVLO protection on supply voltage • 3.3 V to 15 V compatible inputs with hysteresis and pull-down • Interlocking function to prevent cross conduction • Internal bootstrap diode • Outputs in phase with inputs • Very compact and simplified layout • Flexible, easy and fast design Circuit Diagram.